| 摘要 |
A memory cell is formed of a semiconductor junction diode interposed between conductors. The cell is programmed by rendering the memory cell very high-resistance, such that current no longer flows between the conductors on application of a read voltage. In this cell the diode behaves as a fuse. The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide. The silicide may provide a template for crystallization, decreasing the defect density of the silicon and improving its conductivity. It is advantageous to reduce a dielectric layer (such as an oxide, nitride, or oxynitride) intervening between the silicon and the silicon-forming metal during the step of forming the silicide. |
