High temperature coefficient MOS bias generation circuit,申请号EP20040007356-传众专利搜索

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发明名称	High temperature coefficient MOS bias generation circuit
摘要
申请公布号	EP1482390(B1)	申请公布日期	2010.09.22
申请号	EP20040007356	申请日期	2004.03.26
申请人	BROADCOM CORPORATION	发明人	BEHZAD, ARYA REZA
分类号	G05F3/26;G05F3/20	主分类号	G05F3/26
代理机构		代理人
主权项
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