| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in DOF (depth width of focus) and a resist pattern profile. <P>SOLUTION: The positive resist composition contains a resin component (A) and an acid generator component (B) which generates an acid by exposure, wherein the resin component (A) comprises a silsesquioxane resin (A1) having a structural unit (a1) expressed by formula (I) and a structural unit (a2) expressed by formula (II). In formula (I), R<SP>1</SP>represents a 1-5C straight-chain or branched alkylene group; and in formula (II), R<SP>1</SP>represents a 1-5C straight-chain or branched alkylene group and R<SP>2</SP>represents a tertiary alkyl group. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
