| 摘要 |
Stably providing photoelectric conversion devices having a high withstand voltage and excellent photoelectric conversion efficiency with a high yield rate. Photoelectric conversion device (1) includes substrate (10) of an Al based metal base having an anodized film on at least one surface side on which photoelectric conversion layer (30) which includes a compound semiconductor formed of a group Ib element, a group IIIb element, and a group VIb element, and generates a current by absorbing light, and electrodes (20, 50) for drawing out the current are provided, in which the metal base has a Fe content of 0.05 to 1.0% by mass, and the number of Fe-containing clusters, in which a minimum diameter is not less than 0.3µm and a sum of minimum and maximum diameters divided by 2 falls within the range from 0.5 to 2.5µm, in a cross-section of metal base is 1,500 to 40,000/mm2. |
