Method for production of integrated circuit with low-resistance contacts

摘要

Integrated circuit arrangement (48) comprises a semiconductor substrate (52), a metallic connecting region (102), and a semiconductor layer (84) arranged between the substrate and the connecting region. A transition layer (210) lying parallel to the surface of the substrate is penetrated by several partial regions of the material layer and/or several partial regions of the connecting region. The partial regions of the material layer in the transition layer are each completely surrounded by metallic material. The transition layer is more than 10 nm thick. An independent claim is also included for a process for the production of the integrated circuit arrangement.