| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device having a highly reliable electrode structure with low resistance. <P>SOLUTION: This nitride semiconductor device has a semiconductor layer, a first electrode which is formed on the semiconductor layer and makes ohmic contact, and a second electrode which is formed on the first electrode and has a different shape from that of the first electrode. The first and second electrodes has a junction layer region which is made of a platinum group element and is composed of the upper layer of the first electrode, which is the surface of the first electrode, and the lower layer of the second electrode, which is deposited on the heat-treated first electrode. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
