| 摘要 |
PROBLEM TO BE SOLVED: To control the polarity of a GaN-based group III nitride thin membrane to (0001). SOLUTION: After irradiating the sapphire C surface 28 of a sapphire substrate 21 with nitrogen ion and forming an AlN layer, a GaN-based group III nitride thin membrane is formed on the surface of the AlN layer. The GaN- based group III nitride thin membrane (0001) is grown, if the surface of the AlN layer is clean. |
