| 摘要 |
Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise dissolving a metal precursor in a non-aqueous solvent in a bath; placing a substrate comprising an interconnect opening in the bath, wherein the metal precursor forms a monolayer within the interconnect opening; and placing the substrate in a coreactant mixture, wherein the coreactant reacts with the metal precursor to form a thin barrier monolayer.
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