发明名称 |
Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby |
摘要 |
A process for manufacturing a through via in a semiconductor device includes the steps of: forming a body having a structural layer, a substrate, and a dielectric layer set between the structural layer and the substrate; insulating a portion of the structural layer to form a front-side interconnection region; insulating a portion of the substrate to form a back-side interconnection region; and connecting the front-side interconnection region and the back-side interconnection region through the dielectric layer.
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申请公布号 |
US7800234(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20060600687 |
申请日期 |
2006.11.16 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
MARCHI MAURO;FERRERA MARCO;RIVA CATERINA |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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