发明名称 Data output circuit in semiconductor memory apparatus
摘要 A data output circuit in a semiconductor memory apparatus includes a first data driving unit configured to generate a first driving data at a first timing, a first buffering unit configured to generate a first output data by buffering the first driving data, a second data driving unit configured to generate a second driving data at a second timing that is different from the first timing, and a second buffering unit configured to generate a second output data by buffering the second driving data.
申请公布号 US7800957(B2) 申请公布日期 2010.09.21
申请号 US20080173724 申请日期 2008.07.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 NA KWANG-JIN
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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