发明名称 |
METHOD OF PREPARING TRANSPARENT OHMIC CONTACT STRUCTURE BeO/Au/BeO/p-GaN |
摘要 |
FIELD: physics. ^ SUBSTANCE: method of preparing a transparent ohmic contact structure BeO/Au/BeO/p-GaN involves ion-plasma cleaning of the surface of an epitaxial p-GaN layer and then heating the surface to temperature of 350-370C and depositing an ohmic contact consisting of a BeO layer with p-type conductivity and thickness of 2.8-3.2 nm, a gold layer with thickness of 3.8-4.2 nm and a second BeO layer with thickness of 3.0-4.0 nm. After ion-plasma cleaning and before depositing the first BeO layer on the surface of the heated epitaxial p-GaN layer, an aluminium oxide layer with thickness of not less than 30% of the thickness of the epitaxial p-GaN layer is deposited and then removed. ^ EFFECT: minimisation of defects of the growth structure and increased stability of the said transparent contact structure. ^ 2 dwg |
申请公布号 |
RU2399986(C1) |
申请公布日期 |
2010.09.20 |
申请号 |
RU20090101266 |
申请日期 |
2009.01.16 |
申请人 |
UCHREZHDENIE ROSSIJSKOJ AKADEMII NAUK INSTITUT OBSHCHEJ I NEORGANICHESKOJ KHIMII IM. N.S. KURNAKOVARAN (IONKH RAN);GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "MOSKOVSKIJ GOSUDARSTVENNYJ INSTITUT RADIOTEKHNIKI, EHLEKTRONIKII AVTOMATIKI (TEKHNICHESKIJ UNIVERSITET)" (MIREHA) |
发明人 |
BESPALOV ALEKSEJ VIKTOROVICH;EVDOKIMOV ANATOLIJ ARKAD'EVICH;KETSKO VALERIJ ALEKSANDROVICH;STOGNIJ ALEKSANDR IVANOVICH |
分类号 |
B82B3/00;H01L21/28 |
主分类号 |
B82B3/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|