METHOD OF DSOD ANALYSIS IMPROVED IN SURFACE TREATMENT PROCESS FOR WAFER

摘要

PURPOSE: A direct surface oxide defect(DSOD) analyzing method is provided to simplify a wafer surface-treatment process by implementing a DSOD analysis with respect to a bare wafer. CONSTITUTION: A bare wafer is prepared by sliding single crystalline ingot(S110). The surface of the bare wafer is primarily ground using a first grinding wheel(S120). The surface of the bare wafer is additionally ground using a second grinding wheel with a wider mesh number than that of the first grinding wheel(S130). A cleaning process is performed after the surface of the bar wafer is etched(S150).