发明名称 PHOTOMASK FOR DAMASCENE PROCESS AND THE METHOD FOR MANUFACTURING THE SAME
摘要 <p>PURPOSE: A photomask for the damascene process and manufacturing method thereof is the protrusion of the first thickness on the transparent substrate and transparent substrate. CONSTITUTION: A mask film pattern, the chrome(Cr) film are included. In the protrusion of the first thickness of the mask film pattern, the light source is quarantined. The mask film is formed in the top of the substrate(100). The resist film is formed on the mask film.</p>
申请公布号 KR20100101839(A) 申请公布日期 2010.09.20
申请号 KR20090020241 申请日期 2009.03.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 RYU, CHOONG HAN
分类号 H01L21/027;H01L21/28 主分类号 H01L21/027
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