ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: The organic thin film transistor and manufacturing method thereof is the gate electrode and source electrode, and, the gate electrode and drain. The parasitic capacitance which goes electrode and can become can be minimized. CONSTITUTION: The pattern layer in which the intaglio pattern is formed is formed in substrate(S110). The source electrode and drain electrode are respectively formed in the intaglio pattern inside(S120). In order that it is accepted to the intaglio pattern inside, the insulating layer is respectively formed in the source electrode and drain electrode(S130).