| 摘要 |
<p>Performing a high precision dicing without being affected by a step on a wafer surface, and preventing a particle generation caused by ablation is enabled. A laser dicing apparatus (10), which forms a reformed layer in a wafer (W) by irradiating the wafer (W) with a laser beam, includes: a condensing lens (26) that condenses the laser beam; an astigmatic optical measuring section (29) that measures an unevenness of a surface of the wafer (W) based on the laser beam radiated by a laser oscillating apparatus (21); an actuator (27) that moves the condensing lens (26) to adjust the position of the condensing point of the laser beam; and a control section (50) that controls the actuator (27). The control section (50) switches between a control based on the unevenness measured by the astigmatic optical measuring section (29) and a control for maintaining the position of the condensing lens (26) constant, in accordance with the position of the laser beam.</p> |
