| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve the gap fill in depositing a material between recess gates by etching MPS and the semiconductor substrate having ion implantation. CONSTITUTION: A polysilicon layer is formed on a semiconductor substrate(100). An MPS of a hemispherical shape is formed on the surface of a semiconductor substrate by performing MPS(Metastable Polysilicon) growth process. An ion implantation on semiconductor substrate is performed. MPS and the ion-implanted semiconductor substrate removed by a wet etch process.
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