| 摘要 |
PURPOSE: An oxide diode, a manufacturing method thereof, and an electronic device including the same are provided to apply a diode to various electronic devices by implementing the oxide diode with a high rectification property. CONSTITUTION: The upper side of an n type oxide layer(20) is processed with plasma. A p-type oxide layer(30) is formed on the upper side of the n type oxide layer. The n type oxide layer includes one of InZn oxide, InSn oxide, Zn oxide, Sn oxide, Ti oxide, and a mixture thereof.
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