| 摘要 |
PURPOSE: A test pattern for a semiconductor device and a manufacturing method of the same is stabilizing the production yield and quality of a semiconductor device by preventing the electrical characteristic change of a transistor according to the alignment error of a recess gate and an active area. CONSTITUTION: A dummy device separation film(110) is formed in a semiconductor substrate to define a plurality of dummy active regions. The test pattern of the semiconductor device comprises one side of a dummy active region and also includes a dummy recess region(120) which is overlapped with the other side of the dummy active region. The test pattern is formed with PN joint diode.
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