METHOD OF CHEMICAL MECHANICAL POLISHING PHASE-CHANGE MATERIALS AND METHOD OF FABRICATING PHASE-CHANGE RANDOM ACCESS MEMORY USING THE SAME METHOD

摘要

PURPOSE: A method for chemically and mechanically polishing a phase change material and a method for manufacturing a phase change memory device are provided to reduce the change of composition of the phase change materials. CONSTITUTION: A phase change material(11) is formed on an active surface of a semiconductor wafer. The phase change material is chemically and mechanically polished by a slurry and a polishing pad. The change of composition of the phase change material is suppressed by controlling the temperature of a contact area between the phase change material and the polishing pad within a preset range.