MAGNETORESISTIVE ELEMENT, MAGNETIC RANDOM ACCESS MEMORY, AND METHOD OF MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To provide: a magnetoresistive element which has high reliability and yield; a magnetic random access memory; and methods of manufacturing them.

SOLUTION: The magnetoresistive element includes a lower magnetic layer, a barrier layer provided on the lower magnetic layer, and an upper magnetic layer provided on the barrier layer. Moreover, a first surface of the barrier layer which comes into contact with an upper surface of the lower magnetic layer and a second surface of the upper layer magnetic layer which comes into contact with an upper surface of the barrier layer are both wider in area than the upper surface of the lower magnetic layer.

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