| 发明名称 |
COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composition for ferroelectric thin film formation that can improve relative permittivity much more than a conventional ferroelectric thin film by a simple method and is suitable for use in a thin film capacitor with high capacity density, a method for ferroelectric thin film formation, and a ferroelectric thin film formed by the method. <P>SOLUTION: The composition for ferroelectric thin film formation is used in the formation of the ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide A represented by general formula (Pb<SB>x</SB>La<SB>y</SB>)(Zr<SB>z</SB>Ti<SB>(1-z)</SB>)O<SB>3</SB>(wherein 0.9<x<1.3, 0≤y<0.1, and 0≤z<0.9 are satisfied) with a composite oxide B containing Y (yttrium), and consists of an organic metal compound solution having the respective raw materials dissolved in an organic solvent at rates for imparting the metal atom ratio shown by the general formula such that the mol ratio B/A of B and A satisfies 0.005≤B/A<0.03. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
| 申请公布号 |
JP2010206149(A) |
申请公布日期 |
2010.09.16 |
| 申请号 |
JP20090102815 |
申请日期 |
2009.04.21 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
FUJII JUN;NOGUCHI TAKESHI;SAKURAI HIDEAKI;SOYAMA NOBUYUKI |
| 分类号 |
H01L21/8246;H01L21/316;H01L27/105;H01L41/187;H01L41/318;H01L41/37;H01L41/39 |
主分类号 |
H01L21/8246 |
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