| 发明名称 |
SEMICONDUCTOR DEVICE, POWER CONVERSION EQUIPMENT, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device using semiconductor snubber circuits capable of optionally designing values of resistors R of RC snubber circuits, and to provide power conversion equipment and a method of manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device includes a reflux diode 100 performing unipolar operation, and the semiconductor snubber circuit 200 that is connected to the reflux diode 100 in parallel and integrates a capacitor 210 and a resistor 220 monolithically. In this case, the resistor 220 is formed at one portion of a semiconductor substrate, namely a base material of the semiconductor snubber circuit 200, and includes a high-resistance layer having resistivity higher than that of the semiconductor substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
| 申请公布号 |
JP2010206106(A) |
申请公布日期 |
2010.09.16 |
| 申请号 |
JP20090052565 |
申请日期 |
2009.03.05 |
| 申请人 |
NISSAN MOTOR CO LTD |
发明人 |
TANAKA HIDEAKI;HAYASHI TETSUYA;HOSHI MASAKATSU;YAMAGAMI SHIGEHARU;SUZUKI TATSUHIRO |
| 分类号 |
H01L29/861;H01L21/337;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/088;H01L29/12;H01L29/47;H01L29/739;H01L29/78;H01L29/80;H01L29/808;H01L29/872;H02M1/34 |
主分类号 |
H01L29/861 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
