发明名称 |
METHOD FOR GENERATING TWO DIMENSIONS FOR DIFFERENT IMPLANT ENERGIES |
摘要 |
A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first hard mask layer over the substrate; patterning the first hard mask layer to form one or more first openings having a first critical dimension; performing a first implantation process on the substrate; forming a second hard mask layer over the first hard mask layer to form one or more second openings having a second critical dimension; and performing a second implantation process.
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申请公布号 |
US2010233871(A1) |
申请公布日期 |
2010.09.16 |
申请号 |
US20090404852 |
申请日期 |
2009.03.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG CHUN-CHIEH;YAUNG DUN-NIAN;LIU JEN-CHENG;LIN JENG-SHYAN;WANG WEN-DE |
分类号 |
H01L21/266 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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