发明名称 FILM FORMING APPARATUS, FILM FORMING METHOD, COMPUTER PROGRAM AND STORAGE MEDIUM
摘要 In a film forming method, a substrate is first loaded into a vacuum-evacuable processing chamber. At least a transition metal-containing source gas and a reduction gas are supplied into the processing chamber, and the substrate is heated. Then, a thin film is formed in a recess in the surface of the substrate by heat treatment. Accordingly, the surface recess of the substrate can be filled with a copper film.
申请公布号 US2010233876(A1) 申请公布日期 2010.09.16
申请号 US20070303831 申请日期 2007.06.08
申请人 TOKYO ELECTRON LIMITED;NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY 发明人 MATSUMOTO KENJI;KOIKE JUNICHI;NEISHI KOJI
分类号 H01L21/768;C23C16/458 主分类号 H01L21/768
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