发明名称 |
FILM FORMING APPARATUS, FILM FORMING METHOD, COMPUTER PROGRAM AND STORAGE MEDIUM |
摘要 |
In a film forming method, a substrate is first loaded into a vacuum-evacuable processing chamber. At least a transition metal-containing source gas and a reduction gas are supplied into the processing chamber, and the substrate is heated. Then, a thin film is formed in a recess in the surface of the substrate by heat treatment. Accordingly, the surface recess of the substrate can be filled with a copper film.
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申请公布号 |
US2010233876(A1) |
申请公布日期 |
2010.09.16 |
申请号 |
US20070303831 |
申请日期 |
2007.06.08 |
申请人 |
TOKYO ELECTRON LIMITED;NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY |
发明人 |
MATSUMOTO KENJI;KOIKE JUNICHI;NEISHI KOJI |
分类号 |
H01L21/768;C23C16/458 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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