| 摘要 |
<p>Provided is a test device for testing a memory under test which assembles repair memory blocks in the row direction and memory blocks in the column direction and has at least one repair memory block in the column direction provided to enable replacement, wherein the test device is comprised of a testing unit which sequentially tests the memory under test and sequentially outputs the test result indicating a good or bad block under test; a first counter which sequentially counts the number of bad memory blocks, which is the number of memory blocks determined to be bad included in the other memory blocks, for each memory block in the row direction or the column direction; a selection unit which selects only the number of memory blocks, which have a bad memory block count exceeding a standard value, less than the number of other repair memory blocks in the memory under test; and a test control unit which masks the block under test included in the memory block selected by the selector and further tests the memory under test in the testing unit.</p> |
