FILM DEPOSITION METHOD, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a film deposition method capable of forming a few defect density film of silicon dioxide by a low temperature process without using film deposition under a vacuum atmosphere.

SOLUTION: The method includes the steps of; forming a silicon film 13 by applying a solution containing a polysilane compound on a substrate 11 to form a coating film 12, and then by subjecting the coating film 12 to a first thermal treatment in an inert atmosphere; forming a silicon dioxide precursor film 15 by forming a coating film 14 containing the polysilane compound on the silicon film 13, and then by subjecting the coating film 14 to a second thermal treatment in an oxidizing atmosphere; and forming a silicon dioxide film 16 by subjecting the silicon dioxide precursor film 15 to a third thermal treatment in an oxidizing atmosphere and thereby densifying the silicon film 13.

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