| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of reducing the number of processes to reduce manufacturing cost in forming a pattern having a dimension exceeding the exposure resolution limit of a photolithographic method. SOLUTION: This method for manufacturing the semiconductor device includes the steps of forming a film used as a mask material in processing a processed film 2 on the processed film 2 by a CVD method, in that case, forming a first region 3 functioning as a mask in a first temperature condition, forming a second region 4 functioning as a reflection preventing film in a second temperature condition changed from the first temperature condition on the first region 3 in the same chamber, and forming a first mask material film 5 made of the first and second regions 3 and 4. COPYRIGHT: (C)2010,JPO&INPIT |
