| 摘要 |
A solid-state imaging element having high sensitivity and low smear in miniaturization is provided. The solid-state imaging element includes: a photoelectric conversion unit; a read-out unit; a charge transferring unit; a charge transfer electrode formed over the charge transferring unit; shielding film formed over the charge transfer electrode and has an opening part over the photoelectric conversion unit; and anti-reflection film formed (i) in the opening part, and (ii) over the charge transfer electrode. A first edge, of the to anti-reflection film formed in the opening part, stops protruding before reaching spacing found under the shielding film. A second edge, of the anti-reflection film formed over the charge transfer electrode, stops protruding before covering a side wall of the charge transfer electrode. The first edge faces the side wall of the charge transfer electrode, and the second edge protrudes in a read-out direction of the charge.
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