NON-COOLED INFRARED IMAGE SENSOR

摘要

A fabrication process can be prevented from becoming complicated. A plurality of cavities are provided on the surface of a semiconductor substrate, and a plurality of pixel groups are provided above the cavities, corresponding to the respective cavities. Each of the pixel groups has the same number of pixels arranged in a matrix. Each of the pixels includes: an infrared absorbing film that absorbs incident infrared light and converts the absorbed infrared light to heat; and a thermoelectric conversion element that is electrically isolated from the infrared absorbing film and generates an electrical signal by detecting the heat from the infrared absorbing film. A non-cooled infrared image sensor comprises: the pixel groups; a row selection line group provided between the pixel groups adjacent in a column direction and having the same number of row selection lines as the number of pixels arranged in the same column direction in each of the pixel groups; and a read signal line group provided between the pixel groups adjacent in a row direction and having the same number of read signal lines as the number of pixels arranged in the same row direction in each of the pixel groups. The intersection of the row selection line group and the read signal line group is supported by a support portion of the semiconductor substrate.