Verfahren zur Herstellung eines Halbleiterkristalls,申请号DE200610035377-传众专利搜索

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发明名称	Verfahren zur Herstellung eines Halbleiterkristalls
摘要
申请公布号	DE102006035377(B4)	申请公布日期	2010.09.16
申请号	DE200610035377	申请日期	2006.10.30
申请人	TOYODA GOSEI CO. LTD.;NGK INSULATORS LTD.;OSAKA UNIVERSITY	发明人	YAMAZAKI, SHIRO;HIRATA, KOJI;IMAI, KATSUHIRO;IWAI, MAKOTO;SASAKI, TAKATOMO;MORI, YUSUKE;YOSHIMURA, MASASHI;KAWAMURA, FUMIO;YAMADA, YUJI
分类号	C30B9/00;C30B9/10;C30B29/38;C30B29/40;H01L21/208;H01L33/00	主分类号	C30B9/00
代理机构		代理人
主权项
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