| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device that contributes to further reduction in chip size. SOLUTION: The nonvolatile memory device includes: a semiconductor substrate; columnar gate electrodes formed on the semiconductor substrate; source/drain diffusion layers formed nearby a surface of the semiconductor substrate; nitride films for charge storage, formed on side surfaces of the gate electrodes; and element isolation regions formed in the semiconductor substrate. The plane shapes of the element isolation regions are in a substantially rhomboid shape. COPYRIGHT: (C)2010,JPO&INPIT |
