发明名称 |
ZNO-BASED SEMICONDUCTOR AND ZNO-BASED SEMICONDUCTOR DEVICE |
摘要 |
Provided are a ZnO-based semiconductor capable of alleviating the self-compensation effect and of achieving easier conversion into p-type, and a ZnO-based semiconductor device. The ZnO-based semiconductor includes a nitrogen-doped MgXZn1-XO (0<X<1) crystalline material. The ZnO-based semiconductor is subjected to a photoluminescence measurement performed at an absolute temperature of 12 Kelvin, and thus a spectrum distribution curve is obtained. The ZnO-based semiconductor is formed so that a peak intensity of the distribution curve obtained at 3.3 eV or larger is stronger than a peak intensity of the distribution curve obtained at 2.7 eV or smaller. Consequently, the self-compensation effect can be reduced and the conversion into p-type becomes easier.
|
申请公布号 |
US2010230671(A1) |
申请公布日期 |
2010.09.16 |
申请号 |
US20080680406 |
申请日期 |
2008.09.26 |
申请人 |
NAKAHARA KEN;AKASAKA SHUNSUKE;YUJI HIROYUKI;KAWASAKI MASASHI;OHTOMO AKIRA;TSUKAZAKI ATSUSHI |
发明人 |
NAKAHARA KEN;AKASAKA SHUNSUKE;YUJI HIROYUKI;KAWASAKI MASASHI;OHTOMO AKIRA;TSUKAZAKI ATSUSHI |
分类号 |
H01L29/22;H01L33/16;H01L33/28 |
主分类号 |
H01L29/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|