METHOD FOR FORMING Cu FILM, AND STORAGE MEDIUM

摘要

A film-forming raw material composed of a Cu complex is supplied to a wafer, which is kept at a relatively high first temperature and has a Ru film as a film-forming base film, and an initial nucleus of Cu is formed on the wafer. Then, the film-forming raw material composed of the Cu complex is supplied to the wafer kept at a relatively low second temperature, and Cu is deposited on the wafer having the initial nucleus of Cu formed thereon.