<p>A nitride semiconductor laser element comprising an active layer (106) which is composed of a nitride semiconductor and formed on a substrate, and a current-narrowing layer (109) formed on the active layer (106) and having an opening (109a) for selectively flowing a current to the active layer (106). When the effective refractive index difference between the opening (109a) and the current-narrowing layer (109) is represented by ?n and the optical confinement rate in the vertical direction with respect to the laser light emitted from the active layer (106) and confined in the active layer (106) is represented by Gv, the following relation is satisfied: 0.044 < ?n/Gv < 0.062.</p>
