发明名称 TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE FILM LAMINATE, PROCESSES FOR PRODUCTION OF SAME, AND SILICON THIN FILM SOLAR CELL
摘要 <p>Provided are: a transparent conductive film which exhibits excellent resistance to the reduction caused by hydrogen and excellent light-trapping effect and which is useful in producing a high-efficiency silicon thin film solar cell; a transparent conductive film laminate using the same; processes for the production of the film and the laminate; and a silicon thin film solar cell in which the film or the laminate is used as the electrode. The transparent conductive film is characterized by comprising zinc oxide as the main component and containing at least one additional metal element selected from between aluminum and gallium in an amount satisfying relationship (1), and by exhibiting a surface roughness (Ra) of 35.0nm or more and a surface resistance of 65O/? or lower. -[Al] + 0.30 = [Ga] = -2.68 × [Al] + 1.74 (1) [wherein [Al] is the aluminum content expressed in terms of Al/(Zn+Al) atomic ratio (%), while [Ga] is the gallium content expressed in terms of Ga/(Zn+Ga) atomic ratio (%)]</p>
申请公布号 WO2010104111(A1) 申请公布日期 2010.09.16
申请号 WO2010JP54004 申请日期 2010.03.10
申请人 SUMITOMO METAL MINING CO., LTD.;ABE YOSHIYUKI;NAKAYAMA TOKUYUKI 发明人 ABE YOSHIYUKI;NAKAYAMA TOKUYUKI
分类号 C23C14/08;C23C14/34;C23C14/58;H01B5/14;H01B13/00;H01L31/04 主分类号 C23C14/08
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