| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reflective mask blank and a reflective mask for performing pattern transfer with high resolution by improving contrast to exposure rays of light in the case of using a mask, and improving pattern resolution in a pattern edge section. <P>SOLUTION: This reflective mask blank 10 is provided with: a substrate 1; a multi-layer reflective film 2 successively formed on the substrate for reflecting exposure rays of light; a buffer film 3; and an absorber film 4 for absorbing exposure rays of light. The absorber film 4 is a laminated structure configured of the uppermost layer 4b and a lower layer 4a, and the uppermost layer is formed of materials containing any of the oxide, oxynitride or carbide of Ta, and a reflective index n is set to 0.95 to 0.97, and an extinction coefficient k is set to -0.033 to -0.023, and the lower layer is formed of materials containing Ta, and a reflective index is set to 0.94 to 0.97 and an extinction coefficient is set to -0.050 to -0.036. The reflective mask 20 is obtained by forming a transfer pattern on the absorber film of the reflective mask blank. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
