发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To lead out a drain wiring outside a source wiring even without thickening an interlayer insulating film, and to prevent the insulation breakdown of an insulation film such as a LOCOS oxide film and an interlayer insulating film. <P>SOLUTION: A lead frame 50 is disposed on the rear side of a chip. The lead frame 50 and a bonding wire 53 are connected by a drain wiring, which is routed to the chip surface side and connected to a power source wiring 52 formed on the surface side. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010206235(A) 申请公布日期 2010.09.16
申请号 JP20100144150 申请日期 2010.06.24
申请人 DENSO CORP 发明人 YAMADA AKIRA;AKAGI NOZOMI
分类号 H01L21/76;H01L27/088;H01L29/78 主分类号 H01L21/76
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