| 发明名称 |
FIELD EFFECT TRANSISTOR WITH AIR GAP DIELECTRIC |
| 摘要 |
A field effect transistor (FET) that includes a drain formed in a first plane, a source formed in the first plane, a channel formed in the first plane and between the drain and the source and a gate formed in the first plane. The gate is separated from at least a portion of the body by an air gap. The air gap is also in the first plane.
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| 申请公布号 |
US2010230732(A1) |
申请公布日期 |
2010.09.16 |
| 申请号 |
US20090547529 |
申请日期 |
2009.08.26 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABADEER WAGDI W.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;RANKIN JED H.;TONTI WIILIAM R.;SHI YUN |
| 分类号 |
H01L29/772;H01L21/30;H01L21/336 |
主分类号 |
H01L29/772 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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