SOLID-STATE IMAGING ELEMENT AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging element that suppresses a dark current and also relaxes restrictions on characteristics of a layer having negative fixed electric charge.

SOLUTION: The solid-state imaging element 1 includes: a semiconductor layer 2 where a photodiode for performing photoelectric conversion is formed; a silicon oxide film 21 formed, by using plasma, on the semiconductor layer 2 at least in the region where the photodiode is formed; and a film 22 formed on the silicon oxide film 21 and having negative fixed electric charge.

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