| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device in which neither a front-surface platinum-group metal layer nor a back-surface platinum-group metal layer peels from a support substrate, and to provide a method of manufacturing the semiconductor light-emitting device. <P>SOLUTION: In the method of manufacturing the semiconductor light-emitting device by bonding a layered structure having a plurality of semiconductor layers laminated on a substrate for growth, and the support substrate made of a material different from that of the substrate for growth through a bonding material such as solder, the front-surface platinum-group metal layer and back-surface platinum-group metal layer on front and back surfaces of the support substrate are entirely alloyed with the support substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT |
