| 摘要 |
A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.
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