| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has suppressed warpage nearby a semiconductor element and has enhanced reliability, and is thinner and has higher density, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes the semiconductor element 1 having a pad on one surface, an insulating layer 2 in which the semiconductor element 1 is incorporated, a wiring layer 3 arranged on the insulating layer 2, a via connection portion 4 buried in the insulating layer 2 and electrically connecting the corresponding wiring layer 3 to the pad of the semiconductor element 1, and an adhesion layer 5 arranged on the reverse surface of the semiconductor element 1 on the opposite side from the pad side, the reverse surface of the semiconductor element 1 at least partially having a hollow 6 or recessed portion. <P>COPYRIGHT: (C)2010,JPO&INPIT |
