| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide, for example, a photoelectric conversion element whose sensitivity is raised, a photoelectric conversion device and an image sensor. <P>SOLUTION: A lower electrode (151e) is formed on an insulation film (43) constituted of an organic resin of acrylic resin among a gate insulation film (41), insulation films (42), (43) and (44) formed on a substrate (10). The cross-sectional shape of the lower electrode (151e) on the substrate (10) is uneven, and has a light reflection surface which intersects to incident light obliquely. Consequently, according to the lower electrode (151e), it is possible to scatter light of incident light injected from an upper side of a photosensor (151) to the photosensor (151) passing through an n-type semiconductor layer (151b), a photosensitive layer (151c) and a p-type semiconductor layer (151d) to a separate direction other than an incidence direction of incident light. <P>COPYRIGHT: (C)2010,JPO&INPIT |
