| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a novel structure in which the cathode of a photodiode is formed by an n-type buried layer. <P>SOLUTION: The photoelectric conversion device comprises a p-type region PR, the n-type buried layer 10 formed under the p-type region, an element isolation region 9, and a channel stop region 8 which covers at least a lower portion of the element isolation region 9, wherein the p-type region PR and the buried layer 10 form a photodiode PD, and a diffusion coefficient of a dominant impurity of the channel stop region 8 is smaller than a diffusion coefficient of a dominant impurity of the buried layer 10. <P>COPYRIGHT: (C)2010,JPO&INPIT |
