| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which has a small leakage current by terminating a dangling bond of a semiconductor interface. <P>SOLUTION: On a top wiring layer 39 provided with a bonding pad 40, a fluorine-containing silicon oxide film (SiOF) is provided which is formed by a CVD method as an interposing layer 41 containing fluorine. A silicon nitride film formed by a plasma CVD method is provided thereupon as a passivation film 42 to serve as a barrier for fluorine. A heat treatment is carried out thereafter to diffuse fluorine on a surface of a silicon substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
