CHEMICAL MECHANICAL PLANARIZATION USING NANODIAMOND

摘要

A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5Å/min to achieve a Ra of not greater than about 5.0Å. The substrate can be a III-V substrate or a SiC substrate. The polishing utilizes a chemical mechanical polishing slurry comprising ultra-dispersed diamonds and at least 80 wt % water.