发明名称 FOCUSED ION BEAM APPARATUS
摘要 PROBLEM TO BE SOLVED: To accurately comprehend an emitter crystal structure from an FIM image without being influenced by disturbances such as contamination, and also to judge whether the emitter crystal structure returns to an original status correctly or not even when atom rearrangement is carried out. SOLUTION: A focused ion beam apparatus is provided with an emitter 10, a gas source 11 to supply gas G2, a cooling portion 12 to cool down the emitter, a heating portion 13 to heat a tip of the emitter, an extraction power source portion 15 to extract gas by making the same into gas ion at the emitter tip by impressing an extraction voltage, a beam optical system 16 to irradiate focused ion beams (FIB) to a sample S after making the gas ion into the FIB, an image acquisition mechanism 17 to acquire an FIM image at the emitter tip and, a control portion 7 which has a display portion and a memory portion 7b. The memory portion has a guide memorized in advance to display an ideal crystal structure at the emitter tip, and capable of displaying to the display portion by overlapping the guide on the FIM image acquired by the control portion. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010205426(A) 申请公布日期 2010.09.16
申请号 JP20090046366 申请日期 2009.02.27
申请人 SII NANOTECHNOLOGY INC 发明人 OGAWA TAKASHI;NISHINAKA KENICHI;KOYAMA YOSHIHIRO
分类号 H01J27/26;H01J37/08;H01J37/317 主分类号 H01J27/26
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