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发明名称
VERTICAL SWITCH THREE-DIMENSIONAL MEMORY ARRAY
摘要
A memory device includes a substrate, and, disposed thereover, an array of vertical memory switches. In some embodiments, each switch has at least three terminals and a cross-sectional area less than 6F2.
申请公布号
US2010232200(A1)
申请公布日期
2010.09.16
申请号
US20100720843
申请日期
2010.03.10
申请人
发明人
SHEPARD DANIEL R.
分类号
G11C5/02;G11C5/06;H01L21/336
主分类号
G11C5/02
代理机构
代理人
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地址
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