发明名称 VERTICAL SWITCH THREE-DIMENSIONAL MEMORY ARRAY
摘要 A memory device includes a substrate, and, disposed thereover, an array of vertical memory switches. In some embodiments, each switch has at least three terminals and a cross-sectional area less than 6F2.
申请公布号 US2010232200(A1) 申请公布日期 2010.09.16
申请号 US20100720843 申请日期 2010.03.10
申请人 发明人 SHEPARD DANIEL R.
分类号 G11C5/02;G11C5/06;H01L21/336 主分类号 G11C5/02
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