发明名称 |
METHOD OF DEPOSITING AMORPHOUS HYDROCARBON NITRIDE (A-CN:HX) FILM, ORGANIC EL DEVICE, AND PROCESS FOR PRODUCING SAME |
摘要 |
<p>A method in which a high-density plasma having a relatively low electron temperature is used to stably form an a-CN:Hx film containing carbon-nitrogen (C-N) bonds and having few defects and satisfactory properties using, as a feed gas, a hydrocarbon compound containing a carbon-nitrogen (C-N) bond. Provided is an organic device including an a-CN:Hx film. A hydrocarbon compound containing a C-N bond and either nitrogen or ammonia are used as feed gases to deposit a luminescent layer. A hole injection/transportation layer is formed on the underside of the luminescent layer, and an electron injection layer is formed on the upperside of the luminescent layer. Thus, an organic device including an amorphous hydrocarbon nitride (a-CN:Hx) film as the luminescent layer is obtained.</p> |
申请公布号 |
WO2010104152(A1) |
申请公布日期 |
2010.09.16 |
申请号 |
WO2010JP54120 |
申请日期 |
2010.03.11 |
申请人 |
TOKYO ELECTRON LIMITED;ISHIKAWA, HIRAKU |
发明人 |
ISHIKAWA, HIRAKU |
分类号 |
H05B33/10;C09K11/06;C23C16/34;H01L51/50 |
主分类号 |
H05B33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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