LIGHT EMITTING DEVICE WITH SUBSTRATE SEPARATION BY ION IMPLANTATION

摘要

Embodiments of a method for forming a light emitting device are disclosed. This method includes forming a stacked structure including a substrate, a lower semiconductor layer of a first conductivity type, an active layer, and an upper semiconductor layer of a second conductivity type, wherein the stacked structure includes a separation layer formed below the active layer by ion implantation, and performing a thermal process upon the stacked structure to divide the separation layer laterally such that the stacked structure is separated into an upper part and a lower part. The light emitting device may be fabricated with substrate separation by ion implantation to prevent cracking and enable fabrication of a large size light emitting device having high efficiency at low costs.